| PART |
Description |
Maker |
| Q62702-B0862 BBY5302W BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY52-03W BBY5203W Q62702-B664 |
Utilibox, Plastic Boxes, Style A, ABS Plastic, box is 4.60 inch height x 4.60 inch width x 2.37 inch depth, Black Textured Finish
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY53-02L BBY53-02V BBY53-03L BBY53-05W BBY53 BBY5 |
Varactordiodes - Silicon high Q hyperabrupt dual tuning diode
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
Silicon Tuning Diode 硅调谐二极管
|
http://
INFINEON[Infineon Technologies AG]
|
| Q62702-B915 BBY57-02W BBY5702W |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio)
|
Siemens Group
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BBY57 BBY57-02L BBY57-02V BBY57-05W BBY57-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
Silicon Tuning Diode
|
INFINEON[Infineon Technologies AG]
|
| BB112 Q62702-B240 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BBY52-02W Q62702-B0860 |
Utilibox, Plastic Boxes, Style A, ABS Plastic, box is 4.60 inch height x 3.10 inch width x 1.87 inch depth, Textured Black Finish
Silicon Tuning Diode (High Q hyperband tuning diode Low series inductance)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KDV149 KDV149B KDV149C KDV149D |
Silicon diode for AM radio band tuning applications
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(AM RADIO BAND TUNING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDV1484E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING
|
KEC(Korea Electronics)
|
| KDV287 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)
|
KEC[KEC(Korea Electronics)]
|
| KDV804 KDV804M KDV804S |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TUNING OF SEPERATE RESONANT CIRCUIT)
|
KEC Holdings
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
